| 摘要 |
<P>PROBLEM TO BE SOLVED: To correctly measure the pattern of each layer from the image of a semiconductor device constituted of a plurality of layers. <P>SOLUTION: The SEM image of a semiconductor device constituted of two or more layers is obtained, and the peak position of the pattern is extracted as a peak point from the obtained image. Then, a peak point column constituted of the extracted peak points is grouped, and each group is made to belong to the pattern of each layer. Thus, it is possible to correctly measure the shape of the pattern of each layer. <P>COPYRIGHT: (C)2004,JPO |
