| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a ZnSe light emitting device equipped with a ZnMgSSe clad layer or a BeMgZnSe clad layer, which is improved in luminance and made to have a longer lifetime by making a p-type dopant contained in the p-type clad layer stable. <P>SOLUTION: The ZnMgSSe clad layer is doped with Al, Ga, or In as an n-type dopant together with nitrogen as a p-type dopant, wherein the ratio of Al, Ga, or In to N is set at 0.01 to 0.8:1. The BeMgZnSe clad layer is doped with Al, Ga, or In as an n-type dopant together with nitrogen as a p-type dopant, wherein the ratio of Al, Ga, or In to N is set at 0.01 to 0.8:1. Alternatively, the BeMgZnSe clad layer or the ZnMgSSe clad layer is doped with Cl, Br, or I as an n-type dopant together with Li as a p-type dopant, wherein the ratio of Cl, Br, or I to Li is set at 0.1 to 0.7:1. <P>COPYRIGHT: (C)2004,JPO |
