发明名称 METHOD FOR FORMING FINE PATTERN AND MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for forming a fine pattern by which an original reflectance reducing effect can be obtained even if a resist film is subjected to ashing and resist coating is performed again. <P>SOLUTION: A first antireflection film which suppresses reflection in an absorption mode is formed on the surface of a substrate. A second antireflection film which suppresses reflection in a reduction interference mode is formed on the first antireflection film. A cap film is formed on the second antireflection film. A photosensitive resist film is formed on the cap film. The photosensitive resist film is exposed to light with first wavelengths for forming a latent image. The exposed resist film is developed. <P>COPYRIGHT: (C)2004,JPO
申请公布号 JP2004140212(A) 申请公布日期 2004.05.13
申请号 JP20020304015 申请日期 2002.10.18
申请人 FUJITSU LTD 发明人 WATAYA HIROFUMI
分类号 G03F7/11;H01L21/027;H01L21/311;H01L21/3205;H01L21/76;H01L21/768 主分类号 G03F7/11
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