发明名称 SEMICONDUCTOR DEVICE, SEMICONDUCTOR MODULE, PROCESS FOR FABRICATING SEMICONDUCTOR DEVICE, AND PROCESS FOR FABRICATING SEMICONDUCTOR MODULE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device and a semiconductor module having a shape capable of dealing flexibly with a bending stress being applied, and to provide a process for fabricating a semiconductor device and a process for fabricating a semiconductor module. SOLUTION: An element forming layer 2 having a region 3 in which a semiconductor element is formed is provided on the surface of a silicon substrate 1. A trench 4 is formed within the thickness of the silicon substrate 1 at part on the rear surface thereof corresponding to a region of the element forming layer 2 where the semiconductor element is not formed. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004140029(A) 申请公布日期 2004.05.13
申请号 JP20020300956 申请日期 2002.10.15
申请人 SHARP CORP 发明人 OBARA YOSHIKAZU
分类号 H01L23/12;H01L21/02;H01L21/30;H01L21/306;H01L21/60;H01L29/06;(IPC1-7):H01L21/02 主分类号 H01L23/12
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