发明名称 Magentic memory and method for optimizing write current a in magnetic memory
摘要 The invention provides methods and apparatus for for determining and providing optimum write bit line current and write word line current in an MRAM. A single reference potential is used to determine the values of the write line current and the bit line current. In determining the optimal values, asteroid curves representing bit line magnetic fields Hx generated by write bit line current In and word line magnetic fields Hy generated by write word line current Iw for magnetization are considered, and an asteroid curve ACout is defined outside the asteroid curves of all memory cells taking manufacture variations and design margins into account. A write bit line current and a write word line current are selected such that the write current obtained by adding the write bit line current or currents and the write word line current, or the write power consumed by the bit line or lines and the write word line is minimized. Furthermore, in order to prevent multi-selection, the write bit line current and the write word line current are selected so that they generate a synthetic magnetic field on the curve between calculated points of the asteroid curve ACout.
申请公布号 US2004090835(A1) 申请公布日期 2004.05.13
申请号 US20030680051 申请日期 2003.10.07
申请人 MIYATAKE HISATADA;UMEZAKI HIROSHI;KITAMURA KOHJI;SUNAGA TOSHIO;NODA KOHKI;ASANO HIDEO 发明人 MIYATAKE HISATADA;UMEZAKI HIROSHI;KITAMURA KOHJI;SUNAGA TOSHIO;NODA KOHKI;ASANO HIDEO
分类号 G11C11/15;G11C29/02;H01L21/8246;H01L27/105;H01L43/08;(IPC1-7):G11C29/00 主分类号 G11C11/15
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