METHOD OF PHASE TRANSITION OF AMORPHOUS MATERIAL USING COVER LAYER

摘要

PURPOSE: A method of phase transition of amorphous material using a cover layer is provided to be capable of carrying out a phase transition process without the direct contact between metal and the amorphous material for considerably improving the metal contamination of a thin film. CONSTITUTION: An amorphous material layer(300) is deposited on an insulation substrate(100). A cover layer(400) is formed on the amorphous material layer. A metal layer(500) is then deposited on the convert layer. A phase transition process is performed at the amorphous material layer. Preferably, a buffer layer(200) is deposited on the insulation substrate before the amorphous material layer depositing process. A pre-heating process is performed on the resultant structure before the phase transition process.