| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an epitaxial wafer for semiconductor light-emitting elements, and semiconductor light-emitting elements which are LEDs that do not break, even if voltage changes occur to a certain extent, i.e., are highly reliable, and can be so manufactured at a low cost as to have a high output. <P>SOLUTION: In the semiconductor light-emitting element or its epitaxial wafer, there are laminated successively on a first conduction type semiconductor substrate 1 a first conductivity-type clad layer 3, an undoped active layer 4, a second conductivity-type clad layer 5, and further, a second conductivity-type current dispersion layer 6. Moreover, undoped resistance layers 6b and second conductivity-type layers 6a are formed alternately in the second conductivity-type current dispersion layer 6, and the at least two or more undoped resistance layers 6b are also formed. <P>COPYRIGHT: (C)2004,JPO |
