LIQUID PHASE GROWTH METHOD

摘要

PROBLEM TO BE SOLVED: To provide a liquid phase growth method for keeping constant as much as possible impurity concentration of a semiconductor layer which is grown with liquid phase growth.

SOLUTION: When an epitaxial layer 2 is grown on a metal class silicon substrate 1, the epitaxial layer is grown in the growth process while temperature of the metal class silicon substrate 1 and solvent including impurity is kept to a constant value by setting a certain supersatauration temperature.

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