| 摘要 |
PROBLEM TO BE SOLVED: To obtain a surface channel type MOS (metal oxide semiconductor) transistor that prevents a B punch-through, applies a normal oxide film and a nitride oxide film with a low concentration of nitrogen due to N<SB>2</SB>O as a gate insulating film at a desired film thickness, becomes unnecessary to use a gate insulating film with a number of electronic traps, and has excellent characteristics. SOLUTION: In the surface channel type MOS transistor, a gate electrode 6, formed via the gate insulating film 5 on a semiconductor substrate 1, is composed of a polysilicon with 100-200 nm of thickness where at least impurity is nearly uniformly doped, and then a source/drain region 11 formed in the semiconductor substrate 1, is formed self-aligningly to the gate electrode 6. COPYRIGHT: (C)2004,JPO
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