| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a crystalline semiconductor film which allows the manufacture of semiconductor devices having superior characteristics at a high density. SOLUTION: The method of manufacturing the crystalline semiconductor film comprises a process of forming an amorphous semiconductor film on a substrate, a process of applying a catalyst element for promoting crystallization to the semiconductor film, a first crystallization process of crystallizing the semiconductor film by applying the first energy to it under the existence of the catalyst element, and a second crystallization process of recrystallizing the semiconductor film by applying the second energy to it after the first crystallization process. In the second crystallization process, the second energy is so applied that the temperature of a prescribed region may be higher than that of the other region in order to condense the catalyst element in the prescribed region. COPYRIGHT: (C)2004,JPO
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