发明名称 ELECTRON BEAM EXPOSURE DEVICE AND DEFLECTION AMOUNT CORRECTING METHOD
摘要 PROBLEM TO BE SOLVED: To provide an electron beam exposure device which exposes a wafer while correcting the deflection amount of an electron beam according to thermal deformation of the wafer. SOLUTION: The electron beam exposure device exposes the wafer to a pattern with the electron beam. The device is equipped with an electron beam generation part which generates the electron beam, a deflection part which deflects the electron beam to irradiate a desired position on the wafer with the electron beam, a chamber which holds the wafer in pressure-reduced space, and a deflection control unit which controls the deflection amount of the deflection part according to the elapsed time from when the wafer is carried in the chamber. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004140236(A) 申请公布日期 2004.05.13
申请号 JP20020304650 申请日期 2002.10.18
申请人 ADVANTEST CORP 发明人 YAMADA AKIO
分类号 G03F7/20;H01L21/027;(IPC1-7):H01L21/027 主分类号 G03F7/20
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