Nonvolatile semiconductor memory having page mode with a plurality of banks

摘要

A nonvolatile semiconductor memory includes first and second nonvolatile memory banks, a data-line for read, a data-line for program and verify, a sense amplifier for read, a sense amplifier for program and verify, and a program circuit. The data-lines are arranged in a region between the first and second nonvolatile memory banks, and selectively connected to the bit-lines of the first and second nonvolatile memory banks. The sense amplifier for read is connected to the data-line for read. The sense amplifier for program and verify and the program circuit are connected to the data-line for program and verify.