| 摘要 |
PURPOSE: A method for forming a plug of a semiconductor device is provided to be capable of improving the electrical conductivity of a plug and effectively restraining the ions doped in the plug from being diffused into a substrate. CONSTITUTION: A gate isolating layer(11), a gate(12), and a hard mask(13) are sequentially formed on a semiconductor substrate(10). At this time, a junction region is formed in the semiconductor substrate. An insulating spacer(14) is formed at both sidewalls of the gate. A contact hole is formed for exposing the junction region alone by forming a contact isolation layer(15) between insulating spacers. A plug material layer is deposited on the resultant structure for filling the contact hole. As and P ions are simultaneously implanted into the resultant structure by carrying out an in-situ doping process. A plug(17) is formed for contacting the junction region by etching the plug material layer.
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