| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce the area per capacitive element of a semiconductor device having capacitive elements. <P>SOLUTION: A capacitive element 19, which consists of a lower electrode 16, a capacitive insulating film 17, and an upper electrode 18, is positioned above a conductive plug 13 on a source diffusion region 30a of a MOS transistor 30. The capacitive insulating film 17 is formed along the bottom and wall surfaces of an opening 15a which is provided in a second interlayer insulating film 15 to expose an oxygen barrier film 14. As a result, bends 17a which bend in the penetrating direction of the conductive plug 13 are formed. <P>COPYRIGHT: (C)2004,JPO |
