| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polymer thin film transistor of large electric charge carrier mobility. <P>SOLUTION: This thin film transistor comprises an insulated layer, a gate electrode, a semiconductor layer which is structurally systematic a source electrode and a drain electrode. The semiconductor layer is manufactured by a method which comprises the steps of: producing a composition containing a liquid body and a self-organized polymer which is dissolved in the liquid body at least partially to be a soluble polymer molecule, reducing the solubility of the soluble polymer molecule, accelerating to form a polymer agglomeration which is structurally systematic in the composition, depositing a layer of the composition containing the polymer agglomeration which is structurally systematic, drying the layer at least partially, and forming the layer which is structurally systematic. <P>COPYRIGHT: (C)2004,JPO</p> |
