发明名称 Method of processing a semiconductor wafer
摘要 A method of processing a semiconductor wafer having a large number of rectangular areas sectioned by streets arranged in a lattice form on the front surface, circuits being formed in the respective areas. This method comprises the step of mounting a semiconductor wafer on a protective substrate in such a manner that the front surface of the semiconductor wafer is opposed to one side of the protective substrate having a large number of pores in at least its central area prior to the grinding of the back surface of the semiconductor wafer.
申请公布号 US2004092108(A1) 申请公布日期 2004.05.13
申请号 US20030694179 申请日期 2003.10.28
申请人 YAJIMA KOUICHI;KITAMURA MASAHIKO;NAMIOKA SHINICHI;NANJO MASATOSHI 发明人 YAJIMA KOUICHI;KITAMURA MASAHIKO;NAMIOKA SHINICHI;NANJO MASATOSHI
分类号 H01L21/683;H01L21/00;H01L21/301;H01L21/304;H01L21/58;H01L21/68;H01L21/78;(IPC1-7):H01L21/302;H01L21/461 主分类号 H01L21/683
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