发明名称 |
Method of processing a semiconductor wafer |
摘要 |
A method of processing a semiconductor wafer having a large number of rectangular areas sectioned by streets arranged in a lattice form on the front surface, circuits being formed in the respective areas. This method comprises the step of mounting a semiconductor wafer on a protective substrate in such a manner that the front surface of the semiconductor wafer is opposed to one side of the protective substrate having a large number of pores in at least its central area prior to the grinding of the back surface of the semiconductor wafer.
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申请公布号 |
US2004092108(A1) |
申请公布日期 |
2004.05.13 |
申请号 |
US20030694179 |
申请日期 |
2003.10.28 |
申请人 |
YAJIMA KOUICHI;KITAMURA MASAHIKO;NAMIOKA SHINICHI;NANJO MASATOSHI |
发明人 |
YAJIMA KOUICHI;KITAMURA MASAHIKO;NAMIOKA SHINICHI;NANJO MASATOSHI |
分类号 |
H01L21/683;H01L21/00;H01L21/301;H01L21/304;H01L21/58;H01L21/68;H01L21/78;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
H01L21/683 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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