| 摘要 |
A semiconductor memory device of the invention has a first reference cell connected to a first bit line and a first word line to be controlled; a second reference cell connected to the first bit line and a second word line to be controlled; a third reference cell connected to a second bit line and the first word line to be controlled; a fourth reference cell connected to the second bit line and the second word line to be controlled; and a word line select circuit connected to the first and second word lines for selecting the reference potential to be generated in the first bit line and the second bit line by selecting the first word line or second word line. Accordingly, the influence upon a semiconductor memory device in the yields of the reference cells is reduced in a semiconductor memory device using a ferroelectric capacitor, and a more highly reliable semiconductor memory device is to be provided.
|
