发明名称 Magnetoresistance sensor with a controlled-magnetostriction Co-Fe free-layer film
摘要 A magnetoresistance sensor structure has a free layer including a Co-Fe free-layer film. The Fe content is from about 12 to about 16 atomic percent, producing a saturation magnetostriction value from about -1x10<-6 >to about -2x10<-6>. Where the free layer includes only the Co-Fe free-layer film as a ferromagnetic layer, the Fe content of the Co-Fe free-layer film is from about 13 to about 14 atomic percent. Where the free layer has the Co-Fe free-layer film and a Ni-13.5 atomic percent Fe free-layer film, the Fe content is from about 12 to about 16 atomic percent.
申请公布号 US2004091743(A1) 申请公布日期 2004.05.13
申请号 US20020293462 申请日期 2002.11.12
申请人 IBM 发明人 KULA WITOLD;ZELTSER ALEXANDER
分类号 B32B9/00;H01F10/14;H01F10/16;H01F10/32;H01F41/30;(IPC1-7):B32B9/00 主分类号 B32B9/00
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