发明名称 METHOD OF POLYCYRSTALLIZATION, METHOD OF MANUFACTURING POLYSILICON THIN FILM TRANSISTOR, AND LASER IRRADIATION DEVICE THEREFOR
摘要 <p>A device for irradiating a laser beam onto an amorphous silicon thin film formed on a substrate. The device includes: a stage mounting the substrate; a laser oscillator for generating a laser beam; a projection lens for focusing and guiding the laser beam onto the thin film; a reflector for reflecting the laser beam guided onto the thin film; a controller for controlling a position of the reflector, and an absorber for absorbing the laser beam reflected by the reflector.</p>
申请公布号 AU2003272110(A1) 申请公布日期 2004.05.13
申请号 AU20030272110 申请日期 2003.10.21
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 MYUNG-KOO KANG
分类号 H01L21/268;B23K26/02;B23K26/06;H01L21/20;H01L21/336;H01L21/77;H01L29/786 主分类号 H01L21/268
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