ORGANIC SEMICONDUCTOR DEVICE

摘要

An organic semiconductor device is composed of at least two p-type and n-type channel organic semiconductor elements. The respective organic semiconductor elements comprise an opposing pair of source electrode and drain electrode, an organic semiconductor layer with carrier mobility which is so formed as to provide a channel between the source electrode and the drain electrode, and a gate electrode for applying an electric field to the organic semiconductor layer between the source electrode and the drain electrode via a gate insulating film. In the organic semiconductor device, the source electrode and the drain electrode of the p-type channel organic semiconductor element is composed of a material having a higher work function than the material for the source electrode and the drain electrode of the n-type channel organic semiconductor element.