PLASMA OSCILLATION SWITCHING DEVICE

摘要

A plasma oscillation switching device comprises a semiconductor substrate (101), a first barrier layer (103) formed on the substrate and made of a group III-V compound semiconductor, a channel layer (104) formed on the first barrier layer and made of a group III-V compound semiconductor, a second barrier layer (105) formed on the channel layer and made of a group III-V compound semiconductor, a source electrode (107), a gate electrode (109) and a drain electrode (108), these three electrodes being formed on the second barrier layer. The first barrier layer has an n-type diffusion layer (103a) and the second barrier layer has a p-type diffusion layer (105a). The band gap of the cannel layer is smaller than those of the first and second barrier layers. Two-dimensional electron gas (EG) accumulates in a conduction band on the boundary between the first barrier layer and the channel layer, while two-dimensional hole gas (HG) accumulates in a valence band of the boundary between the second barrier layer and the channel layer. The electrodes are formed on the second barrier layer via an insulating layer (106).