| 摘要 |
1,171,826. Silicon solid circuits; resistors. NORTH AMERICAN AVIATION Inc. 24 Jan., 1967 [26 Jan., 1966], No.3591/67. Headings H1K and H1S. [Also in Division C7] Silicon is deposited on single-crystal beryllium oxide substrates by high-temperature thermal decomposition, by the hydrogen reduction of silicon tetrachloride, by the reduction of other silicon halides or hydrides or by vapour transfer of elemental silicon, then division of the deposit and impregnation with acceptor and donor impurities converts the silicon into diodes, transistors, resistors, capacitors &e. The silicon is deposited on natural crystal faces of the beryllium oxide, and is in epitaxial overgrowth on them, mismatches of up to 12-7% between the spacings of the rows of the silicon and beryllium atoms being relieved by microtwinning. Preferred combinations are that of the (111) plane of silicon on (10T1) beryllium oxide and (111) silicon on (0001) beryllium oxide, but (100) silicon on (10T0) beryllium oxide and (110) silicon on (10T0) beryllium oxide are described.
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