| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a miniaturized semiconductor integrated circuit device with improved cooling performance. <P>SOLUTION: A p-channel type MOSFET 31, whose source is connected to a power supply lead 23 at the higher potential side and whose drain is connected to an output lead 28 at the higher potential side for an external load, and a diode 32, whose cathode is connected to the lead 28 and whose anode is connected to an output lead 29 at the lower potential side for the external load, have respective chips mounted on a depress-worked island 38, and the surface of the island 38 opposite to the chip mounted surface thereof is made to expose at the lower surface of the package. <P>COPYRIGHT: (C)2004,JPO |
