发明名称 |
Sidewall smoothing in high aspect ratio/deep etching using a discrete gas switching method |
摘要 |
An improved method for introducing gases into an alternating plasma etching/deposition chamber is provided by the present invention. To minimize the introduction of pressure pulses into the alternating etching/deposition chamber when the deposition and etchant gas supplies are switched on and off, a mass flow controller is used to provide a relatively constant flow of gas. A gas bypass or a gas exhaust is provided such that when a gas inlet to the alternating etching/deposition chamber is closed an alternative path is provided for the flow of gas from the mass flow controller. The provision of a bypass or exhaust maintains the pressure of the gas received from the mass flow controller at a substantially constant level. The elimination or minimization of a pressure pulse of the gas helps increase the smoothness of the walls of high aspect ratio features etched in a silicon substrate in the alternating etching/deposition chamber.
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申请公布号 |
US2004092118(A1) |
申请公布日期 |
2004.05.13 |
申请号 |
US20030640469 |
申请日期 |
2003.08.12 |
申请人 |
JOHNSON DAVID;WESTERMAN RUSSELL;LAI SHOULIANG |
发明人 |
JOHNSON DAVID;WESTERMAN RUSSELL;LAI SHOULIANG |
分类号 |
B81C99/00;H01J37/32;H01L21/00;(IPC1-7):H01L21/311 |
主分类号 |
B81C99/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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