发明名称 |
PROCESS FOR FORMING FUSIBLE LINKS |
摘要 |
A process for forming fusible links in an integrated circuit in which the fusible links are formed in the final metallization layer simultaneously with bonding pads. The process can be applied in the fabrication of integrated circuits that employ copper metallization and low k dielectric materials. After patterning the final metal (aluminum) layer to form the fusible links and the bonding pads, a dielectric etch stop layer is formed over the final metal layer before a passivation layer is deposited. The passivation layer is removed in areas over the fusible links and the bonding pads. The dielectric etch stop layer is removed either from above the bonding pads only, or from above both the bonding pads and the fusible links.
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申请公布号 |
US2004092091(A1) |
申请公布日期 |
2004.05.13 |
申请号 |
US20020292399 |
申请日期 |
2002.11.12 |
申请人 |
YANG GWO-SHII;CHEN JEN KON;CHEN HSUEH-CHUNG;BARTH HANS-JOACHIM;HSIUNG CHIUNG-SHENG;LIU CHIH-CHIEN;CHEN TONG-YU;LIN YI-HSIUNG;YANG CHIH-CHAO |
发明人 |
YANG GWO-SHII;CHEN JEN KON;CHEN HSUEH-CHUNG;BARTH HANS-JOACHIM;HSIUNG CHIUNG-SHENG;LIU CHIH-CHIEN;CHEN TONG-YU;LIN YI-HSIUNG;YANG CHIH-CHAO |
分类号 |
H01L23/525;(IPC1-7):H01L21/44 |
主分类号 |
H01L23/525 |
代理机构 |
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代理人 |
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地址 |
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