The invention relates to a method for producing a transistor structure, comprised of at least one first and one second bipolar transistor with different collector widths. The invention is characterized in that all junctions between differently doped regions have a sharp interface. A first collector region (2.1) is suited for use in a high-frequency transistor having high limit frequencies fT, and a second collector region (2.2) is suited for use in a high-voltage transistor having increased breakdown voltages.
