| 摘要 |
A bipolar transistor (1) structure and process technology is described incorporating a emitter, a base, and a collector, with most (7) of the intrinsic base adjacent the collector having a graded energy bandgap and a layer (6) of the intrinsic base adjacent the emitter having a substantially constant energy bandgap. The invention has a smaller base transit time than a conventional graded-base-bandgap bipolar transistor (1). |
