| 摘要 |
According to one exemplary embodiment, a circuit (302) comprises a bipolar transistor (304) having a base, an emitter, and a collector. For example, the bipolar transistor (304) can be an NPN SiGe HBT. The base of the bipolar transistor (304) is an input of the circuit (302). The emitter of the bipolar transistor (304) is coupled to a first reference voltage (308). According to this exemplary embodiment, the circuit (302) further comprises a field effect transistor (306) having a gate, a source, and a drain. For example, the field effect transistor (306) may be an NFET. The collector of the bipolar transistor (304) is coupled to the source of the field effect transistor (306). The gate of the field effect transistor (306) is coupled to a bias voltage (320). The drain of the field effect transistor (306) is coupled to a second reference voltage (328). The drain of the field effect transistor (306) is an output of the circuit (302). |
