GALLIUM INDIUM NITRIDE ARSENIDE HETERO-FIELD-EFFECT TRANSISTOR, ITS MANUFACTURING METHOD, AND TRANSMITTER/RECEIVER USING SAME

摘要

A hetero-field-effect transistor comprises an InP substrate (21), a channel layer (23) formed on a buffer layer (22) on the InP substrate, a spacer layer (25a) made of a semiconductor having a bandgap larger than that of the channel layer and having a heterojunction with the channel layer, and a carrier supply layer (26) adjacent to the spacer layer. The channel layer includes a predetermined semiconductor layer made of a compound semiconductor the composition of which is expressed by chemical formula GaxIn1-xNyA1-y, where A is As or Sb, the number x is 0<=x<=0.2, the number y is 0.03<=y<=0.10.