SUBSTRATE DEVICE, ITS MANUFACTURING METHOD, ELECTROOPTIC DEVICE, AND ELECTRONIC EQUIPMENT

摘要

PROBLEM TO BE SOLVED: To provide a substrate device provided with a thin film transistor that can maintain favorable transistor characteristics over a long period, and to provide a method of manufacturing the device, and so on. SOLUTION: The substrate device is provided with a TFT containing a semiconductor layer 202 and a capacitor, which is composed of a first electrode 216 electrically connected to part of the semiconductor layer 202, a second electrode 218 disposed to face the electrode 216, and a dielectric film disposed between the electrodes 216 and 218 and containing a nitride film 208B and is formed on the TFT, on a substrate 200. The nitride film 208B has an opening 208BM through which the semiconductor layer 202 can be seen in the top view. When the opening 208BM is utilized, the semiconductor layer 202 can be hydrogenated effectively. COPYRIGHT: (C)2004,JPO