发明名称 |
Semiconductor photocathode and photoelectric tube using the same |
摘要 |
A semiconductor photocathode comprises a p<+>-type semiconductor substrate of GaSb, and a p<->-type light absorbing layer of InAsSb. A p<+>-type hole blocking layer is formed between the substrate and the light absorbing layer having wider energy band gap than that of the light absorbing layer, the blocking layer being made of AlGaSb.
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申请公布号 |
US2004089860(A1) |
申请公布日期 |
2004.05.13 |
申请号 |
US20030701533 |
申请日期 |
2003.11.06 |
申请人 |
HAMAMATSU PHOTONICS K. K. |
发明人 |
EDAMURA TADATAKA;NIIGAKI MINORU |
分类号 |
H01J1/34;H01J29/38;H01J31/50;H01J40/06;H01J43/08;H01L29/12;(IPC1-7):H01L29/12 |
主分类号 |
H01J1/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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