发明名称 |
Marks and method for multi-layer alignment |
摘要 |
Marks and a method for multi-layer alignment. A first layer with first alignment marks is formed on a semiconductor substrate, wherein the first alignment marks are separated parallelly by a predetermined distance. A second layer with second alignment marks is formed on the first layer, wherein the second alignment marks are separated parallelly by a predetermined distance. The shift distance of each first alignment mark is measured to calculate a first midpoint between the first alignments. The shift distance of each second alignment mark is measured to calculate a second midpoint between the second alignments. A third midpoint acting as a datum point between the fist midpoint and the second midpoint is calculated.
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申请公布号 |
US2004092080(A1) |
申请公布日期 |
2004.05.13 |
申请号 |
US20030684108 |
申请日期 |
2003.10.10 |
申请人 |
NANYA TECHNOLOGY CORPORATION |
发明人 |
CHEN FENG-YI |
分类号 |
G03F9/00;H01L23/544;(IPC1-7):H01L21/76 |
主分类号 |
G03F9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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