Höckerelektrode für Transistor und Verfahren zur Herstellung

摘要

A vertical-type transistor device includes a transistor unit provided on a surface of a substrate and extending in a first direction; and a bump electrode provided above the transistor unit and crossing the transistor unit in a second direction perpendicular to the first direction. The bump electrode has a first area positionally corresponding to the transistor unit and a second area positionally not corresponding to the transistor unit. The size of the second area in the first direction is greater than the size of the first area in the first direction. The bump electrode has a shape with no interior angle exceeding 270 DEG as seen from above.