| 摘要 |
PROBLEM TO BE SOLVED: To improve a film deposition rate by increasing the film deposition rate in accordance with the electric power to be supplied in sputtering when a film deposition is performed by colliding a gas for sputtering against a target consisting of an electrically insulating material. SOLUTION: In the sputtering film deposition method, a gas for sputtering is collided against a target 30 consisting of an electrically insulating material at the inside of a chamber 10, so that a film is deposited on a substrate 20. In this case, a filament 80 arranged on the side of the sputtering face in the target 30 is energized to release thermoelectrons, and while neutralizing the cations of the gas for sputtering stuck on the target 30 by the thermoelectrons, the film deposition is performed. COPYRIGHT: (C)2004,JPO
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