发明名称 |
Semiconductor device and fabrication method thereof |
摘要 |
The present invention discloses a process of fabricating a semiconductor device comprising the steps of: forming a collector layer of a first conductivity type at a portion of a surface of a semiconductor substrate; forming a collector opening portion in a first insulating layer formed on the semiconductor substrate; epitaxially growing, on the semiconductor substrate of the collector opening portion, a semiconductor layer including a layer of a second conductivity type constituting a base layer; sequentially layering, on the semiconductor substrate, an etching stopper layer against dry etching and a masking layer against wet etching; exposing a part of the etching stopper layer by removing a part of the masking layer by means of dry etching; and by subjecting the exposed etching stopper layer to a wet etching treatment using the remaining masking layer as a mask, forming a base junction opening portion through the etching stopper layer and the masking layer.
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申请公布号 |
US2004092076(A1) |
申请公布日期 |
2004.05.13 |
申请号 |
US20030695478 |
申请日期 |
2003.10.29 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD |
发明人 |
IDOTA KEN;OHNISHI TERUHITO;ASAI AKIRA |
分类号 |
H01L21/331;H01L21/8249;H01L29/737;(IPC1-7):H01L21/331 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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