| 发明名称 |
Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures |
| 摘要 |
A method of fabricating hafnium oxide and/or zirconium oxide films is provided. The methods include providing a mixture of Hf and/or Zr alkoxide dissolved, emulsified or suspended in a liquid; vaporizing at least the alkoxide and depositing the vaporized component at a temperature of greater than 400° C. The resultant film is dense, microcrystalline and is capable of self-passivation when treated in a hydrogen plasma or forming gas anneal.
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| 申请公布号 |
US2004092073(A1) |
申请公布日期 |
2004.05.13 |
| 申请号 |
US20020291334 |
申请日期 |
2002.11.08 |
| 申请人 |
CABRAL CYRIL;CALLEGARI ALESSANDRO C.;GRIBELYUK MICHAEL A.;JAMISON PAUL C.;LACEY DIANNE L.;MCFEELY FENTON R.;NARAYANAN VIJAY;NEUMAYER DEBORAH A.;RANADE PUSHKAR;ZAFAR SUFI |
发明人 |
CABRAL CYRIL;CALLEGARI ALESSANDRO C.;GRIBELYUK MICHAEL A.;JAMISON PAUL C.;LACEY DIANNE L.;MCFEELY FENTON R.;NARAYANAN VIJAY;NEUMAYER DEBORAH A.;RANADE PUSHKAR;ZAFAR SUFI |
| 分类号 |
C23C16/40;C23C16/56;H01L21/28;H01L21/316;H01L21/336;H01L21/8238;H01L27/08;H01L29/49;H01L29/51;(IPC1-7):H01L21/476;H01L21/320;H01L21/31;H01L21/469 |
主分类号 |
C23C16/40 |
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