THYRISTOR COMPONENT WITH IMPROVED OFF-STATE PROPERTIES IN THE REVERSE DIRECTION

摘要

The invention relates to a thyristor with the following features: a) a semiconductor body (100), comprising a front face (101), a back face (102), an edge (103), a first semiconductor zone (20) of a first conducting type, embodied in the region of the rear face (102) and a second semiconductor zone (30), adjacent to the first semiconductor zone (20) of a second conducting type, whereby the edge (103) has a bevelled embodiment in the region of the transition between the first and second semiconductor zones (20, 30), b) at least one third semiconductor zone (50) of the second conducting type, arranged in the region of the front face (101) of the semiconductor body (100) and at least one fourth semiconductor zone (40) of the first conducting type, arranged between the at least one third semiconductor zone (50) and the second semiconductor zone (30) and c) the fourth semiconductor zone (40) terminates before the edge (103) in the lateral direction of the semiconductor body (100), in order to reduce the amplification of a parasitic bipolar transistor formed in the region of the edge by the fourth semiconductor zone (40), the second semiconductor zone (30) and the first semiconductor zone (20).