EXPOSURE PROGRESSING METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: An exposure progressing method for manufacturing a semiconductor device is provided to be capable of restraining the bridge phenomenon between patterns having a micro interval with each other. CONSTITUTION: More than two multi-step exposure masks are prepared. At least one out of the multi-step exposure masks is formed as a no pattern mask and the others are formed as predetermined pattern masks. Photoresist layers are sequentially coated on a substrate by using the no pattern mask and the predetermined pattern mask. Then, an exposure process is performed on the resultant structure. Preferably, a phase transition mask is used when preparing the multi-step exposure masks. At this time, the phase transition mask has the predetermined transmittance.