| 摘要 |
PROBLEM TO BE SOLVED: To product a semiconductor device having a high aspect ratio and a well-shaped, fine pattern including a contact hole. SOLUTION: A CVD insulating film 32 having a thickness of 500 to 1500 nm is deposited on a silicon substrate 31 using CVD. Next, a non-doped, first polysilicon film 33 having a thickness of 300 nm is deposited. Then, an opening 33A is formed in the first polysilicon film 33. A non-doped, second polysilicon film 35 is deposited such that it covers the opening 33A, and the second polysilicon film 35 is removed by an anisotropic etching such that the film 35 remains only on a sidewall of the opening 33A in a mask pattern 33B. As a result, a mask pattern 36 having an opening 35A is obtained, which is formed by the mask pattern 33B comprising the first polysilicon film 33 and a mask pattern 35B comprising the second polysilicon film 35. An anisotropic etching is performed in a high-vacuum, high-density plasma using the mask pattern 36, thereby an opening 32A is formed in the CVD insulating film 32. COPYRIGHT: (C)2004,JPO
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