MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE USING SALICIDE PROCESS

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device using a salicide process for forming a low resistive substance salicide film. SOLUTION: The manufacturing method comprises the steps of: forming a gate electrode G and a source/drain region 20 on a semiconductor substrate 10, and performing only wet etching as an etching processing; successively forming a high-melting point metal film and a capping film over the entire surface of the resultant; forming a monosilicide film on the gate electrode and the source/drain region on the resultant, by performing a first heat treatment process; removing the high-melting point metal film and the capping film in a region, except the region where the monosilicide film is formed; and forming a disilicide film 28 on the resulting substance by performing a second heat treatment process. COPYRIGHT: (C)2004,JPO