| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and an apparatus for detecting an etching ending point which can accurately detect the ending point of etching. SOLUTION: In a plasma etching step, an AC voltage is measured through pads 22a, 22b formed on an outer periphery of a wafer 21, and thereby the etching ending point of the wafer 21 is detected. In this method, a time point when the AC voltage is lower than a predetermined threshold value is used as the etching ending point of the wafer 21. Further, in the plasma etching step, a dual damascene trench etching step of forming a via and a trench in connection with a wiring layer on an insulating layer provided on the wiring layer mediating a liner layer is performed. COPYRIGHT: (C)2004,JPO
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