| 摘要 |
PURPOSE: A CMP(Chemical Mechanical Polishing) slurry for polishing a copper line is provided to be capable of protecting a porous layer formed at the surface of an oxidized copper line for preventing additional oxidation and conserving a high polishing speed. CONSTITUTION: A CMP slurry for polishing a copper line contains metal oxide micro powder, peroxide compound, benzene based compound, ammonium salt or amine based compound, carboxyl based compound, and deionized water. Preferably, the CMP slurry is made of the metal oxide micro powder of 1-15 weight%, the peroxide compound of 0.1-10 weight%, the benzene based compound of 0.01-0.5 weight%, the ammonium salt or amine based compound of 0.01-0.5 weight%, the carboxyl based compound of 0.001-0.5 weight% and the deionized water.
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