发明名称 METHOD FOR FORMING INSULATING LAYER
摘要 PURPOSE: A method for forming an insulating layer is provided to compensate the adhesive force between a lower thin film and a flowable oxide layer by performing a surface treatment on the lower thin film. CONSTITUTION: A surface treatment is performed on a substrate(10). At this time, the substrate has a plurality of metal lines(12). Flowable oxide is then supplied to the entire surface of the resultant structure for forming a flowable oxide layer(14). Preferably, an oxidation process or nitridation process is used as the surface treatment. Preferably, the oxidation process is one selected from a group consisting of an oxygen plasma process, an oxygen hard bake process, or a cleaning process. Preferably, the nitridation process is one selected from a group consisting of an ammonia plasma process, a nitrogen hard bake process, or a cleaning process.
申请公布号 KR20040040734(A) 申请公布日期 2004.05.13
申请号 KR20020068934 申请日期 2002.11.07
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, HONG RAE;KIM, HYEONG SU
分类号 H01L21/316;(IPC1-7):H01L21/316 主分类号 H01L21/316
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