| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist composition which solves problems in the techniques to improve the performance intrinsic to microphotofabrication using far UV rays, in particular, ArF excimer laser beam, to provide a positive resist composition having little developing defect such as bridging, high stability in post coating delay (PCD) and in post exposure delay (PED), and moreover, an excellent process margin. <P>SOLUTION: The positive resist composition comprises (A) a resin containing specified three kinds of repeating units and increasing the solubility in an alkali developer by the effect of an acid, (B) a phenacylsulfonium compound generating an acid by irradiation of active rays or radioactive rays, and (C) a solvent. The positive resist composition induces little development defect such as bridging and shows excellent PCD stability, PED stability and process margin. <P>COPYRIGHT: (C)2004,JPO |
