| 摘要 |
PROBLEM TO BE SOLVED: To provide a laminated semiconductor device which can be favorably reduced in size and to provide its assembling method. SOLUTION: Power transistors 1 to 6 which are each equipped with a drain electrode on its first main surface ad a source electrode and a gate electrode both on its second main surface are stacked up so as to form a laminated semiconductor device. The drain electrodes, source electrodes, and gate electrodes of the power transistors 1 to 6 are electrically connected to bus bars 7 to 11 respectively, and the opposed main surfaces of the laminated power transistors 1 to 6 are electrically connected to the common bus bars 8 to 10. COPYRIGHT: (C)2004,JPO |
