| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser having a window structure which is capable of emitting light with no deviation of an angle of emission. SOLUTION: In the semiconductor laser in which light generated in an active layer is emitted through a window, the window formed on a substrate is formed with a first semiconductor layer formed with a first carrier concentration and a second semiconductor layer formed on the first semiconductor layer so as to comprise the extended surface of the active layer with a second carrier concentration lower than the first carrier concentration. The window is formed with a third semiconductor layer formed on the second semiconductor layer with a third carrier concentration. According to the existence of the third semiconductor layer, the distribution of refractive index of light in the window is symmetry in the direction of lamination with the extended surface of the active layer as a center. By this constitution, generated light is propagated uniformly whereby the light can be emitted with no deviation in a vertical direction (direction of lamination). COPYRIGHT: (C)2004,JPO
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