摘要 |
A flash memory device can include a first redundancy circuit configured to provide read repair information for read operations to the flash memory. The flash memory device can also include a second redundancy circuit, separate from the first redundancy circuit, configured to provide write repair information for write operations to the flash memory. The flash memory device can include a dedicated-read operation redundancy circuit configured to provide read repair information and a dedicated-write operation redundancy circuit configured to provide write repair information. The flash memory device can include also include a first redundancy circuit configured to store an address of a defective memory cell in the flash memory and a second redundancy circuit, separate from the first redundancy circuit, configured to store the address of the defective memory cell.
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