发明名称 A CATHODE PEDESTAL FOR A PLASMA ETCH REACTOR
摘要 Various embodiments of the present invention are generally directed to a plasma etch reactor. In one embodiment, the reactor includes a chamber, a pedestal (105) disposed within the chamber, a gas distribution plate disposed within the chamber overlying the pedestal, a ring (115) surrounding the pedestal, and an upper electrically conductive mesh layer (215) and a lower electrically conductive mesh layer (220) disposed within the pedestal. The ring has a raised portion (118). The upper electrically conductive mesh layer is disposed substantially above the lower electrically conductive mesh layer and is substantially the same size as a substrate (110) configured to be disposed on the pedestal. The lower electrically conductive mesh layer is substantially annular in shape and is disposed around the periphery of the upper electrically conductive mesh layer and below the raised portion of the ring.
申请公布号 WO03103004(A3) 申请公布日期 2004.05.13
申请号 WO2003US17477 申请日期 2003.06.03
申请人 APPLIED MATERIALS, INC. 发明人 YANG, JANG, GYOO;LUE, BRIAN, C.;BUCHBERGER, DOUGLAS, A., JR.;TAVASSOLI, HAMID;CHAE, HEEYEOP;HOFFMAN, DANIEL, J.;ISHIKAWA, TETSUYA;KATS, SEMYON, L.;CHIANG, KANG-LIE
分类号 H05H1/46;H01J37/32;H01L21/00;H01L21/306;H01L21/3065;H01L21/687 主分类号 H05H1/46
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