发明名称 |
OXYGEN BRIDGE STRUCTURES AND METHODS |
摘要 |
<p>A method is proposed for improving the adhesion between a diffusion barrier film and a metal film. Both the diffusion barrier film and the metal film can be deposited in either sequence onto a semiconductor substrate. A substrate comprising a first film, which is one of a diffusion barrier film or a metal film, with the first film being exposed at least at part of the surface area of the substrate, is exposed to an oxygen-containing reactant to create a surface termination of about one monolayer of oxygen-containing groups or oxygen atoms on the exposed parts of the first film. Then the second film, which is the other one of a diffusion barrier film and a metal film, is deposited onto the substrate. Furthermore, an oxygen bridge structure is proposed, the structure comprising a diffusion barrier film and a metal film having an interface with the diffusion barrier film, wherein the interface comprises a monolayer of oxygen atoms.</p> |
申请公布号 |
WO2004040642(A1) |
申请公布日期 |
2004.05.13 |
申请号 |
WO2003US33214 |
申请日期 |
2003.10.21 |
申请人 |
ASM AMERICA, INC.;ASM INTERNATIONAL N.V. |
发明人 |
RAAIJMAKERS, IVO;SOININEN, PEKKA, J.;ELERS, KAI-ERIK |
分类号 |
C23C16/02;H01L21/285;H01L21/3205;H01L21/768;H01L23/532;(IPC1-7):H01L21/768 |
主分类号 |
C23C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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