<p>A method for producing a silicon crystal wherein the boron concentration in the silicon crystal and the growth condition V/G are controlled so that the boron concentration in the silicon crystal is not less than 1 x 10<18> atoms/cm<3> and the growth condition V/G falls within the epitaxial defect-free region alpha2 whose lower limit line LN1 is the line indicating that the growth rate V gradually drops as the boron concentration increases. A method for producing a silicon wafer wherein the boron concentration in the silicon crystal and the growth condition V/G are controlled so that the growth condition V/G falls within at least the epitaxial defect region beta1, and the heat treatment condition of the silicon crystal and the oxygen concentration in the silicon crystal are controlled so that no OSF nucleis grow to OSFs. A method for producing a silicon crystal wherein the boron concentration in the silicon crystal and the growth condition V/G are controlled so that they fall in the vicinity of the lower limit line LN3 within the epitaxial defect-free region alpha1.</p>
